CP211_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN - Amp/Switch Transistor Chip

PROCESS CP211
Power Transistor
NPN - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
80 x 99 MILS
12.5 MILS
12 x 32 MILS
13 x 48 MILS
Al - 30,000Å
Cr/Ni/Ag - 16,000Å
GROSS DIE PER 4 INCH WAFER
1,450
PRINCIPAL DEVICE TYPES
2N3054A
CJD41C
TIP41C
w w w. c e n t r a l s e m i . c o m
R5 (22-March 2010)