CP211 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN - Amp/Switch Transistor Chip

PROCESS CP211
Power Transistor
NPN - Amp/Switch Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL BASE
80 x 99 MILS
12.5 MILS
12 x 32 MILS
13 x 48 MILS
Al - 30,000Å
Cr/Ni/Ag 16,000Å
GROSS DIE PER 4 INCH WAFER
1,450
PRINCIPAL DEVICE TYPES
2N3054A
CJD41C
TIP41C
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R3 (21-September 2003)