CP208 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN - Amp/Switch Transistor Chip

PROCESS CP208
Power Transistor
NPN - Amp/Switch Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL BASE
66 X 66 MILS
12.5 ± 1.0 MILS
12 X 24 MILS
11 X 14 MILS
Al - 50,000Å
Cr/Ni/Ag - 16,000Å
GROSS DIE PER 4 INCH WAFER
2,630
PRINCIPAL DEVICE TYPES
CJD31C
MJE182
TIP31C
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R2 (1-August 2002)