CP206-2N4393 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – N-Channel JFET Die

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CP206-2N4393
N-Channel JFET Die
The CP206-2N4393 is a silicon N-Channel small signal JFET designed for analog switching
and chopper applications.
MECHANICAL SPECIFICATIONS:
Die Size
21 x 18 MILS
G
D
S
Die Thickness
Drain Bonding Pad Size
Source Bonding Pad Size
8.0 MILS
3.0 x 3.0 MILS
3.0 x 3.0 MILS
Gate Bonding Pad Size
3.0 x 3.0 MILS
Top Side Metalization
Al – 30,000Å
Back Side Metalization
Au – 6,000Å
Scribe Alley Width
3.0 MILS
Wafer Diameter
5 INCHES
BACKSIDE GATE
Gross Die Per Wafer
R1
45,000
MAXIMUM RATINGS: (TA=25°C)
Gate-Drain Voltage
Gate-Source Voltage
Gate Current
Operating and Storage Junction Temperature
SYMBOL
VGD
VGS
IG
TJ, Tstg
40
40
50
-65 to +175
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IGSS
VGS=20V
IDSS
VDS=20V
5.0
ID(OFF)
VDS=20V, VGS=5.0V
BVGSS
IG=1.0μA
40
VGS(OFF) VDS=20V, ID=1.0nA
0.5
VGS(f)
VDS=0, IG=1.0mA
VDS(ON)
ID=3.0mA
rDS(ON)
ID=1.0mA, VGS=0
Crss
VGS=5.0V, VDS=0, f=1.0MHz
Ciss
VDS=20V, VGS=0, f=1.0MHz
ton
ID(ON)=3.0mA
toff
VGS(OFF)=5.0V
MAX
0.1
30
0.1
3.0
1.0
0.4
100
3.5
14
15
50
UNITS
V
V
mA
°C
UNITS
nA
mA
nA
V
V
V
V
Ω
pF
pF
ns
ns
R1 (5-February 2016)