CP191V-2N2222A Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – NPN - Small Signal Transistor Die

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CP191V-2N2222A
NPN - Small Signal Transistor Die
The CP191V-2N2222A is a silicon NPN small signal transistor designed for general purpose
switching applications.
B
E
MECHANICAL SPECIFICATIONS:
Die Size
16.5 x 16.5 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Size
3.5 x 4.3 MILS
Emitter Bonding Pad Size 3.5 x 4.3 MILS
Top Side Metalization
Al – 30,000Å
Back Side Metalization
Au-As – 9,000Å
Scribe Alley Width
1.96 MILS
Wafer Diameter
5 INCHES
Gross Die Per Wafer
62,510
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
TJ, Tstg
75
40
6.0
800
-65 to +150
UNITS
V
V
V
mA
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=60V
ICEV
VCE=60V, VEB=3.0V
IEBO
VEB=3.0V
BVCBO
IC=10μA
75
BVCEO
IC=10mA
40
BVEBO
IE=10μA
6.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
0.6
VBE(SAT) IC=500mA, IB=50mA
hFE
VCE=10V, IC=0.1mA
35
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
hFE
VCE=10V, IC=150mA
100
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=500mA
40
fT
VCE=20V, IC=20mA, f=100MHz
300
Cob
VCB=10V, IE=0, f=100kHz
Cib
VEB=0.5V, IC=0, f=100kHz
MAX
10
10
10
0.3
1.0
1.2
2.0
300
8.0
25
UNITS
nA
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
PACKING OPTIONS:
• CP191V-2N2222A-CT: Singulated die in waffle pack; 400 die per tray.
• CP191V-2N2222A-WN: Full wafer, unsawn, 100% tested with reject die inked.
• CP191V-2N2222A-WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked.
R0 (6-March 2015)