CP178 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Power Transistor NPN Darlington Transistor

Central^TM
Semiconductor Corp.
PROCESS CP178
Power Transistor
NPN Darlington Transistor
PROCESS DETAILS
Die Size
Die Thickness
Emitter Bonding Pad Area
Base Bonding Pad Area
Top Side Metalization
Back Side Metalization
131 x 131 MILS
12.5 ±1.0 MILS
27 x 36 MILS
20 x 37 MILS
Al - 50,000Å
Ag - 10,000Å
GEOMETRY
PRINCIPAL DEVICE TYPES
2N6059
BBAACCKKSSIDIDEECCOOLLLLEECCTTOORR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R0 (12 -June 2003)