CP147 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN - Darlington Chip

PROCESS CP147
Power Transistor
NPN - Darlington Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL BASE
195 X 195 MILS
12 MILS
29 X 29 MILS
61 X 35 MILS
Al - 30,000Å
Ti/Ni/Au - Ni-6,000Å; Au-6,000Å
GROSS DIE PER 5 INCH WAFER
280
PRINCIPAL DEVICE TYPES
MJ11012 2N6282
MJ11014 2N6283
MJ11016 2N6284
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R3 (1 -August 2002)