CP108 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Schottky Rectifier, Schottky Barrier Rectifier Chip - 2.0 Amp

PROCESS CP108
Schottky Rectifier
Schottky Barrier Rectifier Chip - 2.0 Amp
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
52 X 52 MILS
9 MILS
47 X 47 MILS
Al - 20,000Å
Au - 10,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
5,110
PRINCIPAL DEVICE TYPES
1N5817
1N5818
1N5819
CXSH-4
CZSH-4
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R8 (9 -September 2003)