CMXT3946_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS

CMXT3946
SURFACE MOUNT
DUAL COMPLEMENTARY
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT3946 type is
a dual complementary silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, and designed
for small signal general purpose and switching
applications.
MARKING CODE: X46
SOT-26 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
NPN
60
40
6.0
PNP
40
40
5.0
200
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL TEST CONDITIONS
MIN MAX
MIN MAX
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
hie
hre
VCE=30V, VEB=3.0V
IC=10μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
-
50
60
-
40
-
6.0
-
- 0.20
- 0.30
0.65 0.85
- 0.95
40
-
70
-
100 300
60
-
30
-
300 -
-
4.0
-
8.0
1.0 10
0.5 8.0
- 50
40 -
40 -
5.0 -
- 0.25
- 0.40
0.65 0.85
- 0.95
60 -
80 -
100 300
60 -
30 -
250 -
- 4.5
- 10
2.0 12
0.1 10
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
V
V
V
V
V
V
V
MHz
pF
pF
kΩ
x10^-4
R3 (12-February 2010)