CMXT3906_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL PNP SILICON TRANSISTORS

CMXT3906
SURFACE MOUNT
DUAL PNP
SILICON TRANSISTORS
SOT-26 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT3906
type is a dual PNP silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, and designed
for small signal general purpose amplifier and switching
applications.
MARKING CODE: X2A
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
40
40
5.0
200
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICEV
VCE=30V, VEB=3.0V
50
BVCBO
IC=10μA
40
BVCEO
IC=1.0mA
40
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=10mA, IB=1.0mA
0.25
VCE(SAT)
IC=50mA, IB=5.0mA
0.40
VBE(SAT)
IC=10mA, IB=1.0mA
0.65
0.85
VBE(SAT)
IC=50mA, IB=5.0mA
0.95
hFE
VCE=1.0V, IC=0.1mA
60
hFE
VCE=1.0V, IC=1.0mA
80
hFE
VCE=1.0V, IC=10mA
100
300
hFE
VCE=1.0V, IC=50mA
60
hFE
VCE=1.0V, IC=100mA
30
fT
VCE=20V, IC=10mA, f=100MHz
250
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.5
Cib
VBE=0.5V, IC=0, f=1.0MHz
10
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
12
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
V
V
V
V
V
V
V
MHz
pF
pF
kΩ
R3 (12-February 2010)