CMXT2222A_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL NPN SILICON TRANSISTORS

CMXT2222A
SURFACE MOUNT
DUAL NPN
SILICON TRANSISTORS
SOT-26 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT2222A
type is a dual NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, and designed
for small signal general purpose and switching
applications.
MARKING CODE: X1P
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
75
40
6.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
ICBO
VCB=60V
10
ICBO
VCB=60V, TA=125°C
10
ICEV
VCE=60V, VEB=3.0V
10
IEBO
VEB=3.0V
10
BVCBO
IC=10μA
75
BVCEO
IC=10mA
40
BVEBO
IE=10μA
6.0
VCE(SAT) IC=150mA, IB=15mA
0.3
VCE(SAT) IC=500mA, IB=50mA
1.0
VBE(SAT) IC=150mA, IB=15mA
0.6
1.2
VBE(SAT) IC=500mA, IB=50mA
2.0
hFE
VCE=10V, IC=0.1mA
35
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=500mA
40
fT
VCE=20V, IC=20mA, f=100MHz
300
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
kΩ
kΩ
R3 (12-February 2010)