CMXT2207_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS

CMXT2207
SURFACE MOUNT
DUAL COMPLEMENTARY
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT2207 type is
a dual complementary silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, and designed
for small signal general purpose and switching
applications.
MARKING CODE: X07
SOT-26 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
NPN
PNP
75
60
40
60
6.0
5.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
ICBO
ICBO
ICBO
ICBO
IEBO
ICEV
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
fT
fT
VCB=60V
VCB=50V
VCB=60V, TA=125°C
VCB=50V, TA=125°C
VEB=3.0V
VCE=60V, VEB=3.0V
VCE=30V, VBE=0.5V
IC=10μA
IC=10mA
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1.0V, IC=150mA
VCE=10V, IC=500mA
VCE=20V, IC=20mA, f=100MHz
VCE=20V, IC=50mA, f=100MHz
-
10
-
-
-
10
-
-
-
10
-
10
-
-
75
-
40
-
6.0
-
-
0.3
-
1.0
0.6
1.2
-
2.0
35
-
50
-
75
-
100 300
50
-
40
-
300
-
-
-
-
-
-
10
-
-
-
10
-
-
-
-
-
50
60
-
60
-
5.0
-
-
0.4
-
1.6
-
1.3
-
2.6
75
-
100
-
100
-
100 300
-
-
50
-
-
-
200
-
UNITS
nA
nA
μA
μA
nA
nA
nA
V
V
V
V
V
V
V
MHz
MHz
R3 (12-February 2010)