CMXSH-3_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT TRIPLE ISOLATED SILICON SCHOTTKY DIODES

CMXSH-3
SURFACE MOUNT
TRIPLE ISOLATED
SILICON SCHOTTKY DIODES
SOT-26 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXSH-3 type
contains three (3) Isolated Schottky Silicon Switching
Diodes, manufactured by the epitaxial planar process,
epoxy molded in a SUPERmini™ surface mount
package, and designed for applications requiring low
forward voltage drop.
MARKING CODE: XH3
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
Θ_JA
30
100
350
750
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
VR=25V
IR
VR=25V, TA=100°C
BVR
IR=100μA
30
VF
IF=2.0mA
VF
IF=15mA
VF
IF=100mA
CT
VR=1.0V, f=1.0MHz
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
90
500
25
100
0.29
0.33
0.40
0.45
0.74
1.00
7.0
5.0
UNITS
V
mA
mA
mA
mW
°C
°C/W
UNITS
nA
μA
V
V
V
V
pF
ns
R5 (12-February 2010)