CMXDM7002A_15 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET

CMXDM7002A
SURFACE MOUNT SILICON
DUAL N-CHANNEL
ENHANCEMENT-MODE
MOSFET
SOT-26 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXDM7002A
is special dual version of the 2N7002 enhancement-
mode N-Channel MOSFET manufactured by the
N-Channel DMOS Process, and designed for high
speed pulsed amplifier and driver applications. This
special dual transistor device offers low rDS(ON) and
low VDS(ON).
MARKING CODE: X02A
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ_JA
60
60
40
280
280
1.5
1.5
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IGSSF, IGSSR VGS=20V, VDS=0
100
IDSS
VDS=60V, VGS=0
1.0
IDSS
VDS=60V, VGS=0, TJ=125°C
500
ID(ON)
VGS=10V, VDS=10V
500
BVDSS
VGS=0, ID=10μA
60
VGS(th)
VDS=VGS, ID=250μA
1.0
2.5
VDS(ON)
VGS=10V, ID=500mA
1.0
VDS(ON)
VGS=5.0V, ID=50mA
0.15
VSD
VGS=0, IS=400mA
1.2
rDS(ON)
VGS=10V, ID=500mA
2.0
rDS(ON)
VGS=10V, ID=500mA, TJ=125°C
3.5
rDS(ON)
VGS=5.0V, ID=50mA
3.0
rDS(ON)
VGS=5.0V, ID=50mA, TJ=125°C
5.0
gFS
VDS=10V, ID=200mA
80
Crss
VDS=25V, VGS=0, f=1.0MHz
5.0
Ciss
VDS=25V, VGS=0, f=1.0MHz
50
Coss
VDS=25V, VGS=0, f=1.0MHz
25
UNITS
V
V
V
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
Ω
Ω
mS
pF
pF
pF
R3 (9-February 2015)