CMXDM7002A Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET

CMXDM7002A
DUAL
N-CHANNEL
ENHANCEMENT-MODE
SURFACE MOUNT MOSFET
SOT-26 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMXDM7002A is special dual version of the
2N7002 Enhancement-mode N-Channel Field
Effect Transistor, manufactured by the N-Channel
DMOS Process, designed for high speed pulsed
amplifier and driver applications. This special
Dual Transistor device offers low rDS(ON) and
low VDS _(ON).
Marking Code is X02A
MAXIMUM RATINGS (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
TJ,Tstg
Θ_JA
60
60
40
280
280
1.5
1.5
350
-65 to +150
357
UNITS
V
V
V
mA
mA
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR
SYMBOL
TEST CONDITIONS
IGSSF
IGSSR
IDSS
IDSS
ID(ON)
BVDSS
VGS(th)
VDS(ON)
VDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
ton
toff
VSD
VGS=20V, VDS=0V
VGS=20V, VDS=0V
VDS=60V, VGS=0V
VDS=60V, VGS=0V, Tj=125°C
VGS=10V, VDS ≥ 2VDS(ON)
VGS=0V, ID=10µA
VDS=VGS, ID=250µA
VGS=10V, ID=500mA
VGS=5.0V, ID=50mA
VGS=10V, ID=500mA
VGS=10V, ID=500mA, Tj=125°C
VGS=5.0V, ID=50mA
VGS=5.0V, ID=50mA, Tj=125°C
VDS ≥ 2VDS(ON), ID=200mA
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDD=30V, VGS=10V, ID=200mA,
RG=25Ω, RL=150Ω
VGS=0V, IS=400mA
(TA=25°C unless otherwise noted)
MIN
MAX
UNITS
100
nA
100
nA
1.0
µA
500
µA
500
mA
60
V
1.0
2.5
V
1.0
V
0.15
V
2.0
Ω
3.5
Ω
3.0
Ω
5.0
Ω
80
mmhos
5.0
pF
50
pF
25
pF
20
ns
20
ns
1.2
V
R0 ( 05-December 2001)