CMXD3003TO Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT TRIPLE ISOLATED OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES

Product Brief
CMXD3003TO
180V, 200mA Triple Opposing,
Low Leakage Switching Diodes in SOT-26 package
SOT-26
Central Semiconductor’s CMXD3003TO consists of three (3)
isolated, low leakage silicon switching diodes arranged in an
alternating configuration and packaged in the SOT-26. This
device is suitable for a host of switching, signal blocking and
steering diode applications. These isolated diodes can be
arranged in multiple configurations by utilizing varied
mounting pad geometries.
Typical Electrical Characteristics
Features:
• Very low leakage current (1.0nA)
• Low capacitance (4.0pF)
• Excellent high temperature performance
Applications:
• Voltage multiplier
• Steering diode array
• General purpose switching
Benefits:
• Energy efficiency
• Multiple configurations possible
• Industry standard SOT-26 package
Samples:
Literature:
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VR
(V)
MAX
180
Electrical Characteristics Per Diode: (TA = 25˚C unless otherwise noted)
IO
VF
@ IF
IR
@ VR
CT
Thermal Characteristics
PD
TJ, Tstg
Θ_JA
(mA)
MAX
200
(V)
(V)
(mA)
(V)
MIN
MAX
MAX
(pF)
MAX
(mW)
MAX
(˚C)
MAX
0.62
0.72
1.0
0.72
0.83
10
1.0nA
125
0.80
0.89
0.83
0.93
50
3.0μA
125*
100
10nA
180
4.0
0.87
1.10
200
5.0μA
180*
0.90
1.15
300
350
-65 to +150
* TA = 150˚C
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com
(˚C/W)
MAX
357