CMXD2004TO_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – HIGH VOLTAGE SILICON SWITCHING DIODES

CMXD2004TO
SURFACE MOUNT
TRIPLE ISOLATED OPPOSING
HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-26 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXD2004TO
consists of three (3) Isolated High Voltage Silicon
Switching Diodes arranged in an alternating
configuration in a SUPERmini SOT-26 surface mount
package, and designed for high voltage switching
applications. This device can be configured as a
900V switching diode. See optional mounting pad
configuration.
MARKING CODE: X04TO
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Average Forward Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
240
300
200
225
625
4.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=240V
100
IR
VR=240V, TA=150°C
100
BVR
IR=100μA
300
VF
IF=100mA
1.0
CT
VR=0, f=1.0MHz
5.0
trr
IF=IR=30mA, Irr=3.0mA, RL=100Ω
50
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
μA
V
V
pF
ns
R2 (12-February 2010)