CMXD2004S_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – HIGH VOLTAGE SILICON SWITCHING DIODES

CMXD2004S
CMXD2004SR
SURFACE MOUNT
DUAL PAIR, IN-SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-26 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXD2004S and
CMXD2004SR consists of dual, in-series pairs of high
voltage silicon switching diodes, manufactured in a
SUPERmini™ SOT-26 surface mount package, and
designed for high voltage switching applications. This
device can be configured as a 1200V switching diode,
or as a bridge rectifier. See optional mounting pad
configurations on following page.
MARKING CODES: CMXD2004S: CX04S
CMXD2004SR: C04SR
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Average Forward Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
240
300
200
225
625
4.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=240V
100
IR
VR=240V, TA=150°C
100
BVR
IR=100μA
300
VF
IF=100mA
1.0
CJ
VR=0, f=1.0MHz
5.0
trr
IF=IR=30mA, Irr=3.0mA, RL=100Ω
50
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
UNIT
nA
μA
V
V
pF
ns
R4 (25-May 2012)