CMUT5551 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

CMUT5551
NPN SILICON TRANSISTOR
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUT5551
type is an NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high
voltage amplifier applications.
MARKING CODE: 55C
SOT-523 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
180
160
6.0
600
250
-65 to +150
500
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=120V
ICBO
VCB=120V, TA=100°C
BVCBO
IC=100µA
180
BVCEO
IC=1.0mA
160
BVEBO
IE=10µA
6.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=50mA, IB=5.0mA
hFE
VCE=5.0V, IC=1.0mA
80
hFE
VCE=5.0V, IC=10mA
80
hFE
VCE=5.0V, IC=50mA
30
fT
VCE=10V, IC=10mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
NF
VCE=5.0V, IC=200µA, RS=10Ω
f=10Hz to 15.7kHz
MAX
50
50
0.15
0.20
1.00
1.00
UNITS
nA
µA
V
V
V
V
V
V
V
250
300
MHz
6.0
pF
200
8.0
dB
R0 (28-October 2004)