CMUT4401 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMUT4401 NPN
CMUT4403 PNP
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
SOT-523 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUT4401 and
CMUT4403 are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a ULTRAmini™ surface mount package,
designed for small signal general purpose amplifier and
switching applications.
MARKING CODE: CMUT4401: PC1
CMUT4403: FC2
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
ICEV
VCE=35V, VEB=0.4V
IBEV
VCE=35V, VEB=0.4V
BVCBO
IC=100μA
BVCEO
IC=1.0mA
BVEBO
IE=100μA
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=500mA, IB=50mA
hFE
VCE=1.0V, IC=0.1mA
hFE
VCE=1.0V, IC=1.0mA
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=150mA
hFE
VCE=2.0V, IC=150mA
hFE
VCE=2.0V, IC=500mA
fT
VCE=10V, IC=20mA, f=100MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
CMUT4401 CMUT4403
60
40
40
40
6.0
5.0
600
250
-65 to +150
500
CMUT4401
MIN MAX
-
0.1
-
0.1
60
-
40
-
6.0
-
- 0.40
- 0.75
0.75 0.95
-
1.2
20
-
40
-
80
-
100 300
-
-
40
-
250
-
-
6.5
-
30
CMUT4403
MIN MAX
-
0.1
-
0.1
40
-
40
-
5.0
-
- 0.40
- 0.75
0.75 0.95
-
1.3
30
-
60
-
100
-
-
-
100 300
20
-
200
-
-
8.5
-
30
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
μA
μA
V
V
V
V
V
V
V
MHz
pF
pF
R1 (9-February 2010)