CMUDM8005 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMUDM8005
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-523 CASE
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUDM8005
is an Enhancement-mode P-Channel MOSFET,
manufactured by the P-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers Low rDS(ON) and
Low Theshold Voltage.
MARKING CODE: 5C8
FEATURES:
• ESD Protection up to 2kV
• 300mW Power Dissipation
• Very Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-523 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State - Note 1)
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
IS
IDM
PD
TJ, Tstg
20
8.0
650
250
1.0
300
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=4.5V, VDS=0
IDSS
VDS=16V, VGS=0
BVDSS
VGS=0, ID=250μA
20
VGS(th)
VDS=VGS, ID=250μA
0.5
VSD
VGS=0, IS=250mA
rDS(ON)
VGS=4.5V, ID=350mA
0.25
rDS(ON)
VGS=2.5V, ID=300mA
0.37
rDS(ON)
VGS=1.8V, ID=150mA
Qg(tot)
VDS=10V, VGS=4.5V, ID=200mA
1.2
Qgs
VDS=10V, VGS=4.5V, ID=200mA
0.24
Qgd
VDS=10V, VGS=4.5V, ID=200mA
0.36
Notes: (1) Mounted on 2 inch square FR-4 PCB with copper mounting pad area of 1.13in²
MAX
10
100
1.0
1.1
0.36
0.5
0.8
UNITS
V
V
mA
mA
A
mW
°C
UNITS
μA
nA
V
V
V
Ω
Ω
Ω
nC
nC
nC
R3 (27-September 2011)