CMUDM8004_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMUDM8004
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUDM8004
is an Enhancement-mode P-Channel MOSFET,
manufactured by the P-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers Low rDS(on) and
Low Theshold Voltage.
MARKING CODE: 84C
SOT-523 CASE
• Devices are Halogen Free by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
FEATURES:
• ESD Protection up to 2kV
• Low rDS(on)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-523 Surface Mount Package
• Complimentary N-Channel MOSFET: CMUDM7004
MAXIMUM RATING: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
PD
TJ, Tstg
30
8.0
450
250
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS=0, ID=100μA
30
VGS(th)
VDS=VGS, ID=250μA
0.5
VSD
VGS=0, IS=100mA
rDS(ON)
VGS=4.5V, ID=430mA
1.0
rDS(ON)
VGS=2.5V, ID=200mA
1.5
rDS(ON)
VGS=1.8V, ID=100mA
2.6
Qg(tot)
VDS=10V, VGS=4.5V, ID=1.0A
0.88
Qgs
VDS=10V, VGS=4.5V, ID=1.0A
0.35
Qgd
VDS=10V, VGS=4.5V, ID=1.0A
0.128
gFS
VDS =10V, ID=100mA
200
Crss
VDS=25V, VGS=0, f=1.0MHz
8.0
Ciss
VDS=25V, VGS=0, f=1.0MHz
45
Coss
VDS=25V, VGS=0, f=1.0MHz
9.0
MAX
3.0
1.0
1.0
1.1
1.1
2.0
3.3
10
55
15
UNITS
V
V
mA
mW
°C
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
nC
nC
nC
mS
pF
pF
pF
R3 (2-August 2011)