CMUDM8001 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMUDM8001
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-523 CASE
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUDM8001
is an Enhancement-mode P-Channel Field Effect
Transistor, manufactured by the P-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low rDS(on)
and Low Theshold Voltage.
MARKING CODE: C8A
FEATURES:
• Power Dissipation 250mW
• Low rDS(on)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-523 Surface Mount Package
• Complementary Device: CMUDM7001
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
20
10
100
200
250
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=10V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=100μA
20
VGS(th)
VDS=VGS, ID=250μA
0.6
rDS(ON)
VGS=4.0V, ID=10mA
rDS(ON)
VGS=2.5V, ID=10mA
rDS(ON)
VGS=1.5V, ID=1.0mA
gFS
VDS=10V, ID=100mA
100
Crss
VDS=3.0V, VGS=0, f=1.0MHz
15
Ciss
VDS=3.0V, VGS=0, f=1.0MHz
45
Coss
VDS=3.0V, VGS=0, f=1.0MHz
15
ton
VDD=3.0V, VGS=2.5V, ID=10mA
35
toff
VDD=3.0V, VGS=2.5V, ID=10mA
80
MAX
1.0
1.0
1.1
8.0
12
45
UNITS
V
V
mA
mA
mW
°C
UNITS
μA
μA
V
V
Ω
Ω
Ω
mS
pF
pF
pF
ns
ns
R1 (9-February 2010)