CMUDM7004 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMUDM7004
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-523 CASE
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUDM7004
is an Enhancement-mode N-Channel Field Effect
Transistor, manufactured by the N-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low rDS(on)
and Low Theshold Voltage.
MARKING CODE: 74C
FEATURES:
• ESD Protection up to 2kV
• Low rDS(on)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-523 Surface Mount Package
• Complimentary P-Channel MOSFET: CMUDM8004
MAXIMUM RATING: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
PD
TJ, Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS=0, ID=10μA
30
VGS(th)
VDS=VGS, ID=250μA
0.5
VSD
VGS=0, IS=400mA
0.5
rDS(ON)
VGS=4.5V, ID=200mA
rDS(ON)
VGS=2.5V, ID=100mA
rDS(ON)
VGS=1.8V, ID=75mA
gFS
VDS=10V, ID=100mA
200
Crss
VDS=25V, VGS=0, f=1.0MHz
Ciss
VDS=25V, VGS=0, f=1.0MHz
Coss
VDS=25V, VGS=0, f=1.0MHz
ton
VDS=5.0V, VGS=4.0V, ID=75mA, RG=10Ω
toff
VDS=5.0V, VGS=4.0V, ID=75mA, RG=10Ω
30
8.0
450
250
-65 to +150
TYP
MAX
3.0
1.0
1.0
1.1
280
460
390
560
550
730
5.0
43
8.0
20
75
UNITS
V
V
mA
mW
°C
UNITS
μA
μA
V
V
V
mΩ
mΩ
mΩ
mS
pF
pF
pF
ns
ns
R0 (17-June 2010)