CMST6427E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini SILICON NPN DARLINGTON TRANSISTOR

CMST6427E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON
DARLINGTON TRANSISTOR
SOT-323 CASE
APPLICATIONS:
• Motor drivers
• Relay drivers
• Pre-amplifier input applications
• Voltage regulator controls
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST6427E is an
Enhanced Specification, SUPERmini™, NPN Silicon
Darlington Transistor. High DC Current gains, coupled
with a Low Saturation Voltage, make this an excellent
choice for industrial/consumer applications where
operational efficiency and small size are top priority.
MARKING CODE: C46
FEATURES:
• High current (500mA max)
• High DC current gain (15k min)
• Low saturation voltage (VCE(SAT)=0.8V max)
• High input impedance
• SUPERmini™ SOT-323 surface mount package
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
♦ Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
60
60
40
12
500
275
-65 to +150
455
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
♦ ICEO
VCB=30V
VCE=25V
IEBO
VBE=10V
♦ BVCBO
IC=100µA
60
♦ BVCES
IC=100µA
60
BVCEO
IC=10mA
40
♦ BVEBO
IE=10µA
14
♦ VCE(SAT)
IC=50mA, IB=0.5mA
VCE(SAT)
♦ VCE(SAT)
IC=100mA, IB=0.1mA
IC=500mA, IB=0.5mA
♦ Enhanced specification
MAX
100
100
100
0.80
0.85
1.0
UNITS
V
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
nA
V
V
V
V
V
V
V
R1 (9-February 2010)