CMST5088 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SUPERmini. SURFACE MOUNT NPN SILICON TRANSISTORS

CMST5088
CMST5089
SUPERmini^™
SURFACE MOUNT
NPN SILICON TRANSISTORS
SOT-323 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST5088,
CMST5089 types are NPN silicon transistors
manufactured by the epitaxial planar process,
epoxy molded in a SUPERmini^™ surface mount
package, designed for applications requiring high
gain and low noise. Marking Codes are 1QC,
1RC respectively.
MAXIMUM RATINGS:
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
(TA=25°C)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
CMST5088
35
30
4.5
50
250
-65 to +150
500
CMST5089
30
25
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMST5088
CMST5089
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
ICBO
ICBO
IEBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
Cib
hfe
NF
VCB=20V
VCB=15V
VEB=3.0V
VEB=4.5V
IC=100µA
IC=1.0mA
IE=100µA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=500µA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100µA, RS=10kΩ
f=10Hz to 15.7kHz
50
50
35
30
4.5
0.5
0.8
300
900
350
300
50
4.0
15
350 1400
3.0
50
100
30
25
4.5
0.5
0.8
400 1200
450
400
50
4.0
15
450 1800
2.0
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
nA
nA
V
V
V
V
V
MHz
pF
pF
dB
R1 ( 19-September 2001)