CMST3906 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – The CENTRAL SEMICONDUCTOR CMST3904,

CMST3904 NPN
CMST3906 PNP
SUPERmini^TM
COMPLEMENTARY
SILICON TRANSISTOR
SOT-323 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current IC
Power Dissipation
PD
Operating and Storage
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ_JA
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST3904,
CMST3906 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a SUPERmini^TM surface
mount package, designed for small signal general
purpose amplifier and switching applications.
MARKING CODES:
CMST3904: 1AC
CMST3906: 2AC
CMST3904
60
40
6.0
200
250
-65 to +150
500
CMST3906
40
40
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMST3904
SYMBOL
TEST CONDITIONS
MIN
MAX
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
fT
VCE=30V, VEB=3.0V
IC=10µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
50
60
40
6.0
0.20
0.30
0.65
0.85
0.95
40
70
100
300
60
30
300
CMST3906
MIN MAX
50
40
40
5.0
0.25
0.40
0.65
0.85
0.95
60
80
100
300
60
30
250
UNITS
nA
V
V
V
V
V
V
V
MHz
R2 (26-September 2002)