CMST3410_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) SILICON TRANSISTORS

CMST3410 NPN
CMST7410 PNP
SURFACE MOUNT
COMPLEMENTARY LOW VCE(SAT)
SILICON TRANSISTORS
SOT-323 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST3410,
CMST7410 types are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERmini™ surface mount package,
designed for battery driven, handheld devices requiring
high current and low VCE(SAT) voltages.
MARKING CODES: CMST3410: C03
CMST7410: C07
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JA
40
25
6.0
1.0
1.5
275
-65 to +150
455
UNITS
V
V
V
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMST3410
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100µA
40
BVCEO
IC=10mA
25
BVEBO
IE=100µA
6.0
VCE(SAT)
IC=50mA, IB=5.0mA
20
VCE(SAT)
IC=100mA, IB=10mA
35
VCE(SAT)
IC=200mA, IB=20mA
75
VCE(SAT)
IC=500mA, IB=50mA
130
VCE(SAT)
IC=800mA, IB=80mA
200
VCE(SAT)
IC=1.0A, IB=100mA
250
VBE(SAT)
IC=800mA, IB=80mA
VBE(ON)
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz (CMST3410)
Cob
VCB=10V, IE=0, f=1.0MHz (CMST7410)
CMST7410
TYP
25
40
80
150
220
275
MAX
100
100
50
75
150
250
400
450
1.1
0.9
300
10
15
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
MHz
pF
pF
R1 (9-February 2010)