CMST3410 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SUPERmini COMPLEMENTARY SILICON LOW VCE(SAT) TRANSISTORS

CMST3410 NPN
CMST7410 PNP
SURFACE MOUNT
SUPERmini^TM
COMPLEMENTARY SILICON
LOW VCE(SAT) TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST3410,
CMST7410 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a SUPERmini^TM surface
mount package, designed for battery driven,
handheld devices requiring high current and low
VCE(SAT) voltages.
SOT-323 CASE
MARKING CODES:
CMST3410: C03
CMST7410: C07
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Collector Current (Peak)
ICM
Power Dissipation
PD
Operating and Storage
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ_JA
40
25
6.0
1.0
1.5
275
-65 to +150
455
UNITS
V
V
V
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMST3410
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100µA
40
BVCEO
IC=10mA
25
BVEBO
IE=100µA
6.0
VCE(SAT)
IC=50mA, IB=5.0mA
20
VCE(SAT)
IC=100mA, IB=10mA
35
VCE(SAT)
IC=200mA, IB=20mA
75
VCE(SAT)
IC=500mA, IB=50mA
130
VCE(SAT)
IC=800mA, IB=80mA
200
VCE(SAT)
IC=1.0A, IB=100mA
250
VBE(SAT)
IC=800mA, IB=80mA
VBE(ON)
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz (CMST3410)
Cob
VCB=10V, IE=0, f=1.0MHz (CMST7410)
CMST7410
TYP
25
40
80
150
220
275
MAX
100
100
50
75
150
250
400
450
1.1
0.9
300
10
15
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
MHz
pF
pF
R0 (5-April 2005)