CMST2222A Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SUPER-MINI NPN SILICON TRANSISTOR

NEW
CMST2222A
Central^TM
Semiconductor Corp.
SUPER-MINI
NPN SILICON TRANSISTOR
DESCRIPTION:
SUPER^TM
mini
SOT-323 CASE
MAXIMUM RATINGS: (TA=25^oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
The CENTRAL SEMICONDUCTOR
CMST2222A type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a super-mini surface mount
package, designed for small signal general
purpose and switching applications.
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
75
40
6.0
600
250
-65 to +150
500
UNITS
V
V
V
mA
mW
o_C
o_C/W
ELECTRICAL CHARACTERISTICS: (TA=25^oC unless otherwise noted)
SYMBOL
ICBO
ICBO
IEBO
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
TEST CONDITIONS
VCB=60V
VCB=60V, TA=125^oC
VEB=3.0V
VCE=60V, VEB=3.0V
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
MIN
MAX UNITS
10
nA
10
µA
10
nA
10
nA
75
V
40
V
6.0
V
0.3
V
1.0
V
0.6
1.2
V
2.0
V
35
50
75
246