CMSSH-3E_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES

CMSSH-3E CMSSH-3CE
CMSSH-3AE CMSSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
SOT-323 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSSH-3E
Series types are Enhanced Versions of the
CMSSH-3 Series of Silicon Schottky Diodes in an
SOT-323 Surface Mount Package.
FEATURED ENHANCED SPECIFICATIONS:
♦ I_F from 100mA max to 200mA MAX
♦ BVR from 30V min to 40V MIN
♦ V_F from 1.0V max to 0.8V MAX
CMSSH-3E: SINGLE
CMSSH-3AE: DUAL, COMMON ANODE
CMSSH-3CE: DUAL, COMMON CATHODE
CMSSH-3SE: DUAL, IN SERIES
MARKING CODE: 31E
MARKING CODE: 3AE
MARKING CODE: 3CE
MARKING CODE: 3SE
MAXIMUM RATINGS: (TA=25°C)
♦Peak Repetitive Reverse Voltage
♦Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
Θ_JA
40
200
350
750
250
-65 to +150
500
UNITS
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
VR=25V
IR
VR=25V, TA=100°C
♦BVR
IR=100µA
40
VF
♦VF
♦VF
♦♦ VF
IF=2.0mA
IF=15mA
IF=100mA
IF=200mA
CT
VR=1.0V, f=1.0MHz
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
♦ Enhanced specification
♦♦ Additional Enhanced specification
90
500
25
100
50
0.29
0.33
0.37
0.42
0.61
0.80
0.65
1.0
7.0
5.0
UNITS
nA
μA
V
V
V
V
V
pF
ns
R2 (9-February 2010)