CMSD2005S_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – HIGH VOLTAGE SILICON SWITCHING DIODES

CMSD2005S
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-323 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSD2005S
contains two (2) High Voltage Silicon Switching
Diodes, manufactured by the epitaxial planar process,
epoxy molded in a SOT-323 surface mount package,
designed for applications requiring high voltage
capability.
MARKING CODE: B5D
MAXIMUM RATINGS: (TA=25 °C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IRRM
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
300
350
200
225
625
4.0
1.0
275
-65 to +150
455
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
VR=280V
100
IR
VR=280V, TA=150°C
100
BVR
IR=100μA
350
VF
IF=20mA
0.87
VF
IF=100mA
1.0
VF
IF=200mA
1.25
CT
VR=0, f=1.0MHz
5.0
trr
IR=IF=30mA, Irr=3.0mA, RL=100Ω
50
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
μA
V
V
V
V
pF
ns
R1 (8-February 2010)