CMSD2004S Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – HIGH VOLTAGE SWITCHING DIODE

NEW ^CMSD2004S
HIGH VOLTAGE
SWITCHING DIODE
SUPER^TM
mini
SOT-323 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMSD2004S
type is a silicon switching diode manufactured by
the epitaxial planar process, designed for
applications requiring high voltage capability.
The following configurations are available:
CMSD2004S
DUAL, IN SERIES
MARKING CODE: B6D
MAXIMUM RATINGS (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 ms
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ,Tstg
Q_JA
240
300
200
225
625
4000
1000
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
UNITS
V
V
mA
mA
mA
mA
mA
mW
°C
°C/W
SYMBOL
BVR
IR
IR
IR
IR
VF
CT
trr
TEST CONDITIONS
IR=100mA
VR=200V
VR=200V, TA=150°C
VR=240V
VR=240V, TA=150°C
IF=100mA
VR=0, f=1 MHz
IF=IR=30mA, RECOV. TO 3.0mA,RL=100W
MIN MAX
300
-
-
100
100
1.0
5.0
50
UNIT
V
nA
mA
nA
mA
V
pF
ns
280