CMRDM7590 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS

CMRDM7590
SURFACE MOUNT
DUAL P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMRDM7590 is
an Enhancement-mode Dual P-Channel Field Effect
Transistor designed for high speed pulsed amplifier
and driver applications. This MOSFET offers Low
rDS(ON) and Low Threshold Voltage.
MARKING CODE: CW
SOT-963 CASE
• Device is Halogen Free by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
FEATURES:
• Power Dissipation: 125mW
• Low Package Profile: 0.5mm (MAX)
• Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatibility
• Small SOT-963 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, tp < 5.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
Θ_JA
20
8.0
140
180
125
-65 to +150
1000
UNITS
V
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IGSSF, IGSSR VGS=5.0V, VDS=0
100
IDSS
VDS=5.0V, VGS=0
50
IDSS
VDS=16V, VGS=0
100
BVDSS
VGS=0, ID=250μA
20
VGS(th)
VDS=VGS, ID=250μA
0.4
1.0
rDS(ON)
VGS=4.5V, ID=100mA
4.0
5.0
rDS(ON)
VGS=2.5V, ID=50mA
5.5
7.0
rDS(ON)
VGS=1.8V, ID=20mA
8.0
10
rDS(ON)
VGS=1.5V, ID=10mA
11
17
rDS(ON)
VGS=1.2V, ID=1.0mA
20
gFS
VDS=5.0V, ID=125mA
1.3
Crss
VDS=15V, VGS=0, f=1.0MHz
1.0
Ciss
VDS=15V, VGS=0, f=1.0MHz
12
Coss
VDS=15V, VGS=0, f=1.0MHz
2.7
ton
VDD=10V, VGS=4.5V, ID=200mA
60
toff
VDD=10V, VGS=4.5V, ID=200mA
210
UNITS
nA
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
R1 (8-February 2010)