CMRDM3590_12 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMRDM3590
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMRDM3590 is
an enhancement-mode dual N-Channel MOSFET,
manufactured by the N-Channel DMOS process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers low rDS(ON) and
low threshold voltage.
MARKING CODE: CR
SOT-963 CASE
• Device is Halogen Free by design
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable devices
FEATURES:
• Power dissipation: 125mW
• Low package profile: 0.5mm (MAX)
• Low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small SOT-963 surface mount package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, tp < 5.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
Θ_JA
20
8.0
160
200
125
-65 to +150
1000
UNITS
V
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IGSSF, IGSSR VGS=5.0V, VDS=0
100
nA
IDSS
VDS=5.0V, VGS=0
50
nA
IDSS
VDS=16V, VGS=0
100
nA
BVDSS
VGS=0, ID=250μA
20
V
VGS(th)
VDS=VGS, ID=250μA
0.4
1.0
V
rDS(ON)
VGS=4.5V, ID=100mA
1.5
3.0
Ω
rDS(ON)
VGS=2.5V, ID=50mA
2.0
4.0
Ω
rDS(ON)
VGS=1.8V, ID=20mA
3.0
6.0
Ω
rDS(ON)
VGS=1.5V, ID=10mA
4.0
10
Ω
rDS(ON)
VGS=1.2V, ID=1.0mA
7.0
Ω
gFS
VDS=5.0V, ID=125mA
1.3
S
Crss
VDS=15V, VGS=0, f=1.0MHz
2.2
pF
Ciss
VDS=15V, VGS=0, f=1.0MHz
9.0
pF
Coss
VDS=15V, VGS=0, f=1.0MHz
3.0
pF
Qg(tot)
VDS=10V, VGS=4.5V, ID=100mA
0.458
nC
Qgs
VDS=10V, VGS=4.5V, ID=100mA
0.176
nC
Qgd
VDS=10V, VGS=4.5V, ID=100mA
0.138
nC
ton
VDD=10V, VGS=4.5V, ID=200mA
25
ns
toff
VDD=10V, VGS=4.5V, ID=200mA
85
ns
R5 (12-December 2012)