CMPTH10_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON RF TRANSISTOR

CMPTH10
SURFACE MOUNT
NPN SILICON
RF TRANSISTOR
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTH10 type
is an NPN silicon RF transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for low noise UHF/VHF
amplifier and high output oscillator applications.
MARKING CODE: C3E
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
PD
TJ, Tstg
Θ_JA
30
25
3.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=25V
IEBO
VEB=2.0V
BVCBO
IC=100µA
30
BVCEO
IC=1.0mA
25
BVEBO
IE=10µA
3.0
VCE(SAT) IC=4.0mA, IB=0.4mA
VBE(ON)
VCE=10V, IB=4.0mA
hFE
VCE=10V, IC=4.0mA
60
fT
VCE=10V, IC=4.0mA, f=100MHz
650
Ccb
VCB=10V, IE=0, f=1.0MHz
Crb
VCB=10V, IE=0, f=1.0MHz
rb’Cc
VCB=10V, IC=4.0mA, f=31.8MHz
MAX
100
100
0.50
0.95
0.70
0.65
9.0
UNITS
V
V
V
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
MHz
pF
pF
ps
R5 (3-February 2010)