CMPTH10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON RF TRANSISTOR

CMPTH10
Central^TM
Semiconductor Corp.
NPN SILICON RF TRANSISTOR
SOT-23 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPTH10 type is an NPN silicon RF transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for low noise UHF/VHF amplifier and
high output oscillator applications.
Marking code is C3E.
MAXIMUM RATINGS (TA=25oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
PD
TJ,Tstg
Θ_JA
30
25
3.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
hFE
fT
Ccb
Crb
rb’Cc
TEST CONDITIONS
MIN
VCB=25V
VEB=2.0V
IC=100µA
30
IC=1.0mA
25
IE=10µA
3.0
IC=4.0mA, IB=0.4mA
VCE=10V, IB=4.0mA
VCE=10V, IC=4.0mA
60
VCE=10V, IC=4.0mA, f=100MHz
650
VCB=10V, IE=0, f=1.0MHz
VCB=10V, IE=0, f=1.0MHz
VCB=10V, IC=4.0mA, f=31.8MHz
MAX
100
100
0.50
0.95
0.70
0.65
9.0
UNITS
V
V
V
mW
o_C
o_C/W
UNITS
nA
nA
V
V
V
V
V
MHz
pF
pF
ps
208