CMPTA42E_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS

CMPTA42E NPN
CMPTA92E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
HIGH VOLTAGE
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA42E and
CMPTA92E are Enhanced versions of the CMPTA42
and CMPTA92 complementary surface mount high
voltage transistors.
MARKING CODES: CMPTA42E: C1DE
CMPTA92E: C2DE
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
♦ Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURED ENHANCED SPECIFICATIONS:
♦ BVCBO from 300V min to 350V min.
♦ BVCEO from 300V min to 350V min.
♦ hFE from 25 min to 50 min.
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
350
350
6.0
500
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
TYP
SYMBOL TEST CONDITIONS
MIN CMPTA42E CMPTA92E
ICBO
IEBO
♦ BVCBO
♦ BVCEO
BVEBO
♦ VCE(SAT)
VBE(SAT)
♦ hFE
♦ hFE
♦ hFE
fT
Cob
VCB=200V
VEB=3.0V
IC=100µA
IC=1.0mA
IE=100µA
IC=50mA, IB=5.0mA
IC=20mA, IB=2.0mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0, f=1.0MHz
350
590
500
350
475
450
6.0
8.7
9.6
125
150
50
110
105
50
110
105
50
110
105
50
75
75
♦ Enhanced specification
MAX
250
100
350
0.9
6.0
UNITS
nA
nA
V
V
V
mV
V
MHz
pF
R3 (3-February 2010)