CMPTA42E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS

CMPTA42E NPN
CMPTA92E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
HIGH VOLTAGE SILICON TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMPTA42E &
CMPTA92E types are Enhanced versions of the
CMPTA42 & CMPTA92 complementary surface
mount high voltage transistors.
MARKING CODES: CMPTA42E: C1DE
CMPTA92E: C2DE
SOT-23 CASE
FEATURED ENHANCED SPECIFICATIONS:
♦ BVCBO from 300V min to 350V min.
♦ BVCEO from 300V min to 350V min.
♦ hFE from 25 min to 50 min.
MAXIMUM RATINGS: (TA=25°C)
♦ ^{Collector-Base Voltage}
♦ Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
350
350
6.0
500
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
TYP
SYMBOL TEST CONDITIONS
MIN CMPTA42E CMPTA92E
ICBO
IEBO
♦ BVCBO
♦ BVCEO
BVEBO
♦ VCE(SAT)
VBE(SAT)
♦ hFE
♦ ^hFE
♦ ^hFE
fT
Cob
VCB=200V
VBE=3.0V
IC=100µA
IC=1.0mA
IE=100µA
IC=50mA, IB=5.0mA
IC=20mA, IB=2.0mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0, f=1.0MHz
350
590
500
350
475
450
6.0
8.7
9.6
125
150
50
110
105
50
110
105
50
110
105
50
75
75
MAX
250
100
350
0.9
UNITS
nA
nA
V
V
V
mV
V
MHz
6.0
pF
♦ Enhanced specification.
R2 (10-October 2003)