CMPTA29 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR

CMPTA29
SURFACE MOUNT
HIGH VOLTAGE
NPN SILICON
DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA29 is an
NPN silicon darlington transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for applications requiring
extremely high voltage and high gain.
MARKING CODE: C29
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VEBO
IC
PD
TJ, Tstg
Θ_JA
100
100
12
500
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C) unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICES
ICBO
IEBO
BVCES
BVCBO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
fT
Cob
VCE=80V
VCB=80V
VBE=10V
IC=100µA
IC=100µA
IE=10µA
IC=10mA, IB=10µA
IC=100mA, IB=100µA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
100
100
12
10,000
10,000
125
MAX
500
100
100
1.2
1.5
2.0
8.0
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
nA
V
V
V
V
V
V
MHz
pF
R4 (3-February 2010)