CMPTA14E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR

CMPTA14E
ENHANCED SPECIFICATION
SURFACE MOUNT NPN
SILICON DARLINGTON TRANSISTOR
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA14E is an
Enhanced version of the CMPTA14 NPN Darlington
Transistor. This device is manufactured by the epitaxial
planar process, epoxy molded in a surface mount
SOT-23 package, designed for applications requiring
extremely high gain.
MARKING CODE: C1NE
FEATURED ENHANCED SPECIFICATIONS:
♦ BVCBO from 30V min to 40V min.
♦ VCE(SAT) from 1.5V max to 1.0V max.
♦ hFE from 10K min to 30K min.
MAXIMUM RATINGS: (TA=25 °C)
♦ Collector-Base Voltage
♦ Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VEBO
IC
PD
TJ, Tstg
Θ_JA
40
40
10
500
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25 °C unless otherwise noted)
SYMBOL
♦ICBO
TEST CONDITIONS
VCB=40V
MIN
TYP
IEBO
♦ BVCES
♦ VCE(SAT)
VEB=10V
IC=100µA
IC=100mA, IB=0.1mA
40
60
0.75
VBE(ON)
♦ hFE
♦ hFE
♦♦ hFE
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=500mA
30,000
40,000
10,000
70,000
75,000
35,000
fT
VCE=5.0V, IC=10mA, f=100MHz
125
♦ Enhanced specification
♦♦ Additional Enhanced specification
MAX
100
100
1.0
2.0
UNITS
nA
nA
V
V
V
MHz
R5 (1-February 2010)