CMPT930 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

CMPT930
Central^TM
Semiconductor Corp.
NPN SILICON TRANSISTOR
DESCRIPTION
SOT-23 CASE
The CENTRAL SEMICONDUCTOR
CMPT930 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose
amplifier applications.
Marking Code is C1X.
MAXIMUM RATINGS (TA=25oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
45
45
5.0
30
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
UNITS
V
V
V
mA
mW
o_C
o_C/W
SYMBOL
ICBO
ICEO
ICES
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
NF
TEST CONDITIONS
VCB=45V
VCE=5.0V
VCE=45V
VEB=5.0V
IC=10µA
IC=10mA
IE=10µA
IC=10mA, IB=0.5mA
IC=10mA, IB=0.5mA
VCE=5.0V, IC=10µA
VCE=5.0V, IC=500µA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=500mA, f=30MHz
VCB=5.0V, IE=0, f=1.0MHz
VCE=5.0V, IC=10mA, RS=10kΩ,
f=10Hz to 15.7kHz
MIN
45
45
5.0
0.6
100
150
30
MAX
10
10
10
10
1.0
1.0
300
600
8.0
3.0
UNITS
nA
nA
nA
nA
V
V
V
V
V
MHz
pF
dB
156