CMPT918_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON RF TRANSISTOR

CMPT918
SURFACE MOUNT
NPN SILICON
RF TRANSISTOR
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT918 type
is an NPN silicon RF transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for high frequency
(VHF/UHF) amplifier and oscillator applications.
MARKING CODE: C3B
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
30
15
3.0
50
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
fT
Cob
Cob
Cib
Pout
Gpe
NF
VCB=15V
IC=1.0μA
30
IC=3.0mA
15
IE=10μA
3.0
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=1.0V, IC=3.0mA
20
VCE=10V, IC=4.0mA, f=100MHz
600
VCB=0V, IE=0, f=1.0MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCB=15V, IC=8.0mA, f=500MHz
30
VCB=12V, IC=6.0mA, f=200MHz
11
VCE=6.0V, IC=1.0mA, RS=50Ω, f=60MHz
MAX
10
0.4
1.0
3.0
1.7
2.0
6.0
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
V
V
V
V
V
MHz
pF
pF
pF
mW
dB
dB
R5 (27-January 2010)