CMPT8099 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMPT8099 NPN
CMPT8599 PNP
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT8099 and
CMPT8599 are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
general purpose audio amplifier applications.
MARKING CODES: CMPT8099: CKB
CMPT8599: C2W
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
CMPT8099 CMPT8599
80
80
80
80
6.0
5.0
500
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT8099
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
IEBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
fT
Cob
Cib
VCB=80V
VBE=6.0V
VBE=4.0V
IC=100µA
IC=10mA
IE=10µA
IC=100mA, IB=5.0mA
IC=100mA, IB=10mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
0.1
0.1
-
80
80
6.0
0.4
0.3
0.6 0.8
100 300
100
75
150
6.0
25
CMPT8599
MIN MAX
0.1
-
0.1
80
80
5.0
0.4
0.3
0.6 0.8
100 300
100
75
150
4.5
30
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
µA
µA
µA
V
V
V
V
V
V
MHz
pF
pF
R5 (1-February 2010)