CMPT7410 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON LOW VCE (SAT) TRANSISTOR

CMPT7410
SURFACE MOUNT
PNP SILICON
LOW VCE _(SAT) TRANSISTOR
SOT-23 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT7410 type is
a PNP Low VCE _(SAT) silicon transistor manufactured
by the epitaxial planar process and epoxy molded in an
SOT-23 surface mount package. This device is
designed for battery driven, handheld devices
requireing high current and Low VCE(SAT) voltages.
MARKING CODE: C741
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ,Tstg
Θ_JA
40
25
6.0
1.0
1.5
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
Cob
VCB=40V
VEB=6.0V
IC=100µA
IC=10mA
IE=100µA
IC=50mA, IB=5.0mA
IC=100mA, IB=10mA
IC=200mA, IB=20mA
IC=500mA, IB=50mA
IC=800mA, IB=80mA
IC=1.0A, IB=100mA
IC=800mA, IB=80mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=100mA
VCE=1.0V, IC=500mA
VCE=1.0V, IC=1.0A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
40
25
6.0
25
40
80
150
220
275
100
100
100
50
100
MAX
100
100
50
75
150
250
400
450
1.1
0.9
300
15
UNITS
V
V
V
A
A
mW
°C
°C/W
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
MHz
pF
R0 (12-November 2004)