CMPT6517_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS

CMPT6517 NPN
CMPT6520 PNP
SURFACE MOUNT
COMPLEMENTARY HIGH VOLTAGE
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT6517 and
CMPT6520 are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for high
voltage driver and amplifier applications.
MARKING CODES: CMPT6517: C1Z
CMPT6520: C2Z
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ_JA
350
350
5.0
500
250
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=250V
IEBO
VEB=5.0V (CMPT6517)
IEBO
VEB=4.0V (CMPT6520)
BVCBO
IC=100µA
350
BVCEO
IC=1.0mA
350
BVEBO
IE=10µA (CMPT6517)
6.0
BVEBO
IE=10µA (CMPT6520)
5.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=20mA, IB=2.0mA
VCE(SAT) IC=30mA, IB=3.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=20mA, IB=2.0mA
VBE(SAT) IC=30mA, IB=3.0mA
VBE(ON) IC=10V, IC=100mA
hFE
VCE=10V, IC=1.0mA
20
hFE
VCE=10V, IC=10mA
30
MAX
50
50
50
0.30
0.35
0.50
1.0
0.75
0.85
0.90
2.0
UNITS
V
V
V
mA
mA
mW
°C
°C/W
UNITS
nA
nA
nA
V
V
V
V
V
V
V
V
V
V
V
V
R5 (1-February 2010)