CMPT6428_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTOR

CMPT6428
CMPT6429
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT6428 and
CMPT6429 are NPN Silicon Transistors manufactured
by the epitaxial planar process, epoxy molded in
a surface mount package, designed for high gain
amplifier applications.
MARKING CODES: CMPT6428: C1K
CMPT6429: C1L
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
CMPT6428 CMPT6429
60
55
50
45
6.0
200
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT6428
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO
ICEO
IEBO
BVCBO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
Cob
Cib
VCB=30V
VCE=30V
VBE=5.0V
IC=100µA
IC=1.0mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10µA
VCE=5.0V, IC=100µA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=1.0mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
-
10
- 100
-
10
60
-
50
-
- 0.20
- 0.60
0.56 0.66
250 -
250 650
250 -
250 -
100 700
- 3.0
- 8.0
CMPT6429
MIN MAX
-
10
-
100
-
10
55
-
45
-
- 0.20
- 0.60
0.56 0.66
500
-
500 1250
500
-
500
-
100 700
-
3.0
-
8.0
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
nA
V
V
V
V
V
MHz
pF
pF
R5 (1-February 2010)