CMPT6427_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR

CMPT6427
SURFACE MOUNT
NPN SILICON
DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT6427 type
is a NPN silicon darlington transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for applications requiring
extremely high gain.
MARKING CODE: C1V
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
40
40
12
500
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=30V
ICEO
VCE=25V
IEBO
VBE=10V
BVCBO
IC=100μA
40
BVCEO
IC=10mA
40
BVEBO
IE=10μA
12
VCE(SAT) IC=50mA, IB=0.5mA
VCE(SAT) IC=500mA, IB=0.5mA
VBE(SAT) IC=500mA, IB=0.5mA
VBE(ON) VCE=5.0V, IC=50mA
hFE
VCE=5.0V, IC=10mA
10K
hFE
VCE=5.0V, IC=100mA
20K
hFE
VCE=5.0V, IC=500mA
14K
fT
VCE=5.0V, IC=10mA, f=100MHz
130
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
NF
VCE=5.0V, IC=1.0mA, RS=100kΩ,
f=1.0kHz to 15.7kHz
MAX
50
1.0
50
1.20
1.50
2.00
1.75
100K
200K
140K
7.0
15
10
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
dB
R6 (1-February 2010)