CMPT591E_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON TRANSISTOR

CMPT591E
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT591E type is
an Enhanced version of the industry standard 591 PNP
silicon transistor. This device is manufactured by the
epitaxial planar process and epoxy molded in an
SOT-23 surface mount package. The CMPT591E
features Low VCE(SAT), high hFE, and has been
designed for high current general purpose amplifier
applications.
SOT-23 CASE
MARKING CODE: C59
COMPLEMENTARY TYPE: CMPT491E
FEATURED ENHANCED SPECIFICATIONS:
♦ VCE(SAT) @ 1.0A = 0.6V MAX (from 0.4V MAX)
♦ hFE @ 500mA = 200 MIN (from 100 MIN)
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
ICM
PD
TJ, Tstg
Θ_JA
80
60
5.0
1.0
200
2.0
350
-65 to +150
357
UNITS
V
V
V
A
mA
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
IEBO
BVCBO
BVCEO
BVEBO
♦ VCE(SAT)
♦ VCE(SAT)
♦ VBE(SAT)
VBE(ON)
♦
♦
hFE
hFE
hFE
hFE
fT
Cob
VCB=60V
VEB=4.0V
IC=100µA
80
IC=10mA
60
IE=100µA
5.0
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
IC=1.0A, IB=100mA
VCE=5.0V, IC=1.0A
VCE=5.0V, IC=1.0mA
200
VCE=5.0V, IC=500mA
200
VCE=5.0V, IC=1.0A
50
VCE=5.0V, IC=2.0A
15
VCE=10V, IC=50mA, f=100MHz
150
VCB=10V, IE=0, f=1.0MHz
♦ Enhanced specification
MAX
100
100
0.20
0.40
1.1
1.0
600
10
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
R3 (27-January 2010)