CMPT591E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON TRANSISTOR

CMPT591E
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT591E
type is a PNP silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high
current, general purpose amplifier applications.
Marking Code is C59.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
VCBO
VCEO
VEBO
IC
IB
ICM
PD
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ_JA
80
60
5.0
1.0
200
2.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
Cob
TEST CONDITIONS
MIN
VCB=60V
VEB=4.0V
IC=100µA
80
IC=10mA
60
IE=100µA
5.0
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
IC=1.0A, IB=100mA
VCE=5.0V, IC=1.0A
VCE=5.0V, IC=1.0mA
200
VCE=5.0V, IC=500mA
200
VCE=5.0V, IC=1.0A
50
VCE=5.0V, IC=2.0A
15
VCE=10V, IC=50mA, f=100MHz
150
VCB=10V, IE=0, f=1.0MHz
UNITS
V
V
V
A
mA
A
mW
°C
°C/W
MAX
100
100
0.20
0.40
1.1
1.0
600
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
10
pF
R2 ( 30-August 2001)